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COURSE UNIT TITLECOURSE UNIT CODESEMESTERTHEORY + PRACTICE (Hour)ECTS
ELECTRONICS I EEM214 Fourth Term (Spring) 3 + 3 7

TYPE OF COURSE UNITCompulsory Course
LEVEL OF COURSE UNITBachelor's Degree
YEAR OF STUDY2
SEMESTERFourth Term (Spring)
NUMBER OF ECTS CREDITS ALLOCATED7
NAME OF LECTURER(S)Assistant Professor Yaşar Nuri Sevgen
Assistant Professor Gülşah Demirhan Aydın
LEARNING OUTCOMES OF THE COURSE UNIT At the end of this course, the students;
1) To learn diodes types and its characteristics and analyze their circuits.
2) To learn the basic characteristics of BJT and to gain an ability to DC analyze of BJT circuits.
3) To gain an ability to ac analyze of BJT amplifiers.
4) To learn the basic characteristics of FET and to gain an ability to DC analyze of FET circuits.
5) To gain an ability to ac analyze of FET amplifiers.
6) To improve the DC/AC design criteria for BJT/FET amplifier circuits.
7) To apply theoretical information into experiments.
8) To gain an ability to work individually with experiments.
9) To learn about the standards used in the engineering applications and ethical rules with homeworks.
MODE OF DELIVERYFace to face
PRE-REQUISITES OF THE COURSEYes(EEM201)
RECOMMENDED OPTIONAL PROGRAMME COMPONENTMAT151, MAT152, MAT210
COURSE DEFINITIONStructure of atom, insulator, semiconductor materials, P and N type materials, Diodes, diod applications, Zener diode, Basic voltage regulator circuits, Other diode types, BJT transistors, structures, properties, CE, CB, CC BJT amplifiers, and biasing, Small signal analysis of BJT amplifiers, FET transistor types, structures, properties, Biasing FET amplifiers, Small signal analysis of FET amplifiers, gain, input and output impedances, Amplifier circuits with microelectronic approach, Current source circuits and biasing with current sources, Internal structures of operational amplifiers.
COURSE CONTENTS
WEEKTOPICS
1st Week Properties of semiconductors, p and n type semiconductor materials.
2nd Week Junction diode. Structure and properties. Diode circuits. Clipper and Clamper circuits.
3rd Week Zener diode and circuits.
4th Week BJT, structure and properties.
5th Week BJT amplifier circuits. DC biasing. Design and analyses of bias circuits.
6th Week FET types, structures and properties.
7th Week Amplifier circuits using FETS. DC biasing. Design and analyses of bias circuits.
8th Week Midterm exam
9th Week AC models of BJT amplifiers. Voltage and current gains, input and output impedances.
10th Week AC models of BJT amplifiers. Voltage and current gains, input and output impedances.
11th Week AC models of FET amplifiers. Voltage and current gains, input and output impedances.
12th Week AC models of FET amplifiers. Voltage and current gains, input and output impedances.
13th Week Multistage amplifier circuits
14th Week Multistage amplifier circuits
RECOMENDED OR REQUIRED READING1. Microelectronic Circuits, Sedra & Smith; Oxford University Press.
2. Microelectronic Circuit Design 3rd ed., R.C. Jaeger, Mc GrawHill Pub.
PLANNED LEARNING ACTIVITIES AND TEACHING METHODSLecture,Questions/Answers,Problem Solving,Experiment,Report Preparation
ASSESSMENT METHODS AND CRITERIA
 QuantityPercentage(%)
Mid-term125
Assignment310
Quiz515
Practice1015
Total(%)65
Contribution of In-term Studies to Overall Grade(%)65
Contribution of Final Examination to Overall Grade(%)35
Total(%)100
ECTS WORKLOAD
Activities Number Hours Workload
Midterm exam122
Preparation for Quiz248
Individual or group work13452
Preparation for Final exam11515
Course hours14456
Preparation for Midterm exam11010
Laboratory (including preparation)155
Final exam122
Homework41560
Total Workload210
Total Workload / 307
ECTS Credits of the Course7
LANGUAGE OF INSTRUCTIONTurkish
WORK PLACEMENT(S)No
  

KEY LEARNING OUTCOMES (KLO) / MATRIX OF LEARNING OUTCOMES (LO)
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