TYPE OF COURSE UNIT	Compulsory Course
LEVEL OF COURSE UNIT	Bachelor's Degree
YEAR OF STUDY	2
SEMESTER	Fourth Term (Spring)
NUMBER OF ECTS CREDITS ALLOCATED	7
NAME OF LECTURER(S)	Assistant Professor Deniz Karaçor
LEARNING OUTCOMES OF THE COURSE UNIT	At the end of this course, the students; 1) Learns the operating characteristics of rectifier and zener diodes and analyzes the related circuits. 2) Detects the characteristics and operating conditions of the BJT transistor and makes DC analysis of the BJT circuits. 3) Using the ac equivalent of the BJT transistor, it analyzes the BJT amplifier circuits and calculates the input-output resistances, current-voltage gains. 4) Detects the characteristics and operating conditions of FET (JFET, MOSFET) and makes DC analysis of FET circuits. 5) Analyzes FET amplifier circuits by using the ac equivalent of FETs and calculates input-output resistances, current-voltage gains. 6) Designs BJT and FET transistor circuits in accordance with desired DC/AC operating conditions. 7) Reinforces theoretical knowledge with experiments. 8) Gains the ability to work individually through experiments. 9) Learns professional standards with homework and gains ethical awareness.
MODE OF DELIVERY	Face to face
PRE-REQUISITES OF THE COURSE	Yes(EEE201)
RECOMMENDED OPTIONAL PROGRAMME COMPONENT	MAT151, MAT152, MAT210
COURSE DEFINITION	Structure of atom, semiconductor materials, P and N type material, Diodes, diode applications, Zener diode, Basic regulator circuits, Other types of diodes, BJT transistors structure and properties, CE, CB, CC amplifier circuits and biasing, small signal model in BJT transistors, gain, input-output impedances, FET types, structures, properties, FET amplifier circuits and biasing, small-signal model in FET transistors, gain, input-output impedances, Microelectronic approach amplifier circuits, Current source circuits and prebiasing transistors with current sources, Internal of the operational amplifier structure.
COURSE CONTENTS	WEEK TOPICS 1st Week 1. Hafta Atomic structure, semiconductor materials, P and N type matter 2nd Week 2. Hafta Diodes, diode applications 3rd Week 3. Hafta Diode applications, basic regulator circuits 4th Week 4. Hafta Zener diodes and their applications 5th Week 5. Hafta Structure of BJT transistors and their features 6th Week 6. Hafta CE, CB, CC amplifier circuits and biasing 7th Week 7. Hafta Types, structures, properties of FET, FET amplifier circuits and biasing 8th Week 8. Hafta MIDTERM 9th Week 9. Hafta Small signal model, gain, input-output impedances of BJT transistors 10th Week 10. Hafta Small signal model, gain, input-output impedances of BJT transistors 11th Week 11. Hafta Small signal model, gain, input-output impedances of FET transistors 12th Week 12. Hafta Small signal model, gain, input-output impedances of FET transistors 13th Week 13. Hafta Multistage amplifiers 14th Week 14. Hafta Multistage amplifiers
RECOMENDED OR REQUIRED READING	1. Microelectronic Circuits, Sedra & Smith; Oxford University Press. 2. Microelectronic Circuit Design 3rd ed., R.C. Jaeger, Mc GrawHill Pub.
PLANNED LEARNING ACTIVITIES AND TEACHING METHODS	Lecture,Questions/Answers,Problem Solving,Experiment,Report Preparation
ASSESSMENT METHODS AND CRITERIA	Quantity Percentage(%) Mid-term 1 25 Assignment 3 10 Quiz 5 15 Practice 10 15 Total(%) 65 Contribution of In-term Studies to Overall Grade(%) 65 Contribution of Final Examination to Overall Grade(%) 35 Total(%) 100
ECTS WORKLOAD	Activities Number Hours Workload Midterm exam 1 2 2 Preparation for Quiz 2 4 8 Individual or group work 13 4 52 Preparation for Final exam 1 15 15 Course hours 14 4 56 Preparation for Midterm exam 1 10 10 Laboratory (including preparation) 1 5 5 Final exam 1 2 2 Homework 4 15 60 Total Workload 210 Total Workload / 30 7 ECTS Credits of the Course 7
LANGUAGE OF INSTRUCTION	English
WORK PLACEMENT(S)	No